Qonda umehluko phakathi kwamabanga ahlukene we-SSD Chips we-NAND Flash SLC, MLC, TLC, QLC

Igama eligcwele le-NAND Flash yi-Flash Memory, okungeyedivayisi yenkumbulo engaguquguquki (Idivayisi Yenkumbulo Engaguquguquki).Isekelwe ekwakhiweni kwesango elintantayo le-transistor, futhi amashaji axhunywe ngesango elintantayo.Njengoba isango elintantayo lihlukaniswe ngogesi, ngakho-ke ama-Electron afika esangweni avaleleke ngisho nangemva kokuba i-voltage isusiwe.Lesi yisizathu sokungaguquguquki kwe-flash.Idatha igcinwa kumadivayisi anjalo futhi ngeke ilahleke ngisho noma ugesi ucishiwe.
Ngokusho kwe-nanotechnology ehlukene, i-NAND Flash ihlangabezane noshintsho ukusuka ku-SLC ukuya ku-MLC, bese kuya ku-TLC, futhi ibheke ku-QLC.I-NAND Flash isetshenziswa kabanzi ku-EMMC/eMCP, i-U disk, i-SSD, imoto, i-inthanethi Yezinto nezinye izinkambu ngenxa yomthamo wayo omkhulu kanye nesivinini sokubhala esisheshayo.

I-SLC (Igama lesiNgisi eligcwele (Iseli Yezinga Elilodwa - SLC) iyisitoreji sezinga elilodwa
Isici sobuchwepheshe be-SLC ukuthi ifilimu ye-oxide phakathi kwesango elintantayo nomthombo mncane.Lapho ubhala idatha, inkokhiso egciniwe ingaqedwa ngokusebenzisa i-voltage ekushajeni kwesango elintantayo bese idlula emthonjeni., okungukuthi, izinguquko ezimbili kuphela zamandla ka-0 no-1 ezingagcina iyunithi yolwazi engu-1, okungukuthi, ibhithi elilodwa/iseli, elibonakala ngesivinini esisheshayo, impilo ende nokusebenza okuqinile.Ububi ukuthi umthamo uphansi futhi izindleko ziphezulu.

I-MLC (igama lesiNgisi eligcwele i-Multi-Level Cell – MLC) iyisitoreji esinezendlalelo eziningi
I-Intel (Intel) yaqala ngempumelelo i-MLC ngo-September 1997. Umsebenzi wayo ukugcina amayunithi amabili olwazi eSangweni Elintantayo (ingxenye lapho ukushaja kugcinwa khona kuseli yenkumbulo ye-flash), bese usebenzisa ukushaja kwamandla ahlukene (Izinga ), Ukufunda nokubhala okunembile ngesilawuli sikagesi esigcinwe kumemori.
Okusho ukuthi, i-2bit/cell, iyunithi yeseli ngayinye igcina imininingwane engu-2bit, idinga ukulawulwa kwamandla kagesi okuyinkimbinkimbi, kunezinguquko ezine ze-00, 01, 10, 11, ijubane ngokuvamile liyisilinganiso, impilo iyisilinganiso, intengo isilinganiso, cishe Izikhathi ezingu-3000—10000 zokusula nokubhala ukuphila. I-MLC isebenza ngokusebenzisa inombolo enkulu yebanga likagesi, iseli ngalinye ligcina izingcezu ezimbili zedatha, futhi ukuminyana kwedatha kukhulu uma kuqhathaniswa, futhi ingagcina amanani angaphezu kuka-4 ngesikhathi.Ngakho-ke, ukwakheka kwe-MLC kungaba nokuminyana kwesitoreji okungcono.

I-TLC (igama lesiNgisi eligcwele i-Trinary-Level Cell) iyisitoreji esinezigaba ezintathu
I-TLC ingu-3bit iseli ngalinye.Iyunithi yeselula ngayinye igcina ulwazi lwe-3bit, olungagcina idatha engu-1/2 ngaphezu kwe-MLC.Kunezinhlobo ezingu-8 zokushintsha kwamandla kagesi ukusuka ku-000 kuya ku-001, okungukuthi, 3bit/cell.Kukhona nabakhiqizi beFlash ababizwa nge-8LC.Isikhathi sokufinyelela esidingekayo side, ngakho isivinini sokudlulisa sihamba kancane.
Inzuzo ye-TLC ukuthi intengo ishibhile, izindleko zokukhiqiza i-megabyte ngayinye iphansi kakhulu, futhi intengo ishibhile, kodwa ukuphila kufushane, kuphela mayelana ne-1000-3000 yokusula kanye nempilo yokubhala kabusha, kodwa izinhlayiya ze-TLC ezihlolwe kakhulu ze-SSD zingakwazi. ingasetshenziswa ngokujwayelekile iminyaka engaphezu kwemi-5.

I-QLC (Igama lesiNgisi eliphelele Iseli Yezinga Eliphezulu) iyunithi yesitoreji enezingqimba ezine
I-QLC ingabuye ibizwe nge-4bit MLC, iyunithi yokugcina enezingqimba ezine, okungukuthi, 4bits/cell.Kukhona izinguquko ezingu-16 ku-voltage, kodwa umthamo ungakhuphuka ngo-33%, okungukuthi, ukusebenza kokubhala nokuphila kokusula kuzoncishiswa nakakhulu uma kuqhathaniswa ne-TLC.Esivivinyweni esithile sokusebenza, iMagnesium yenze izivivinyo.Mayelana nesivinini sokufunda, zombili izixhumi ezibonakalayo ze-SATA zingafinyelela ku-540MB/S.I-QLC yenza okubi kakhulu ngesivinini sokubhala, ngoba isikhathi sayo sokuhlela se-P/E side kune-MLC ne-TLC, isivinini sihamba kancane, futhi isivinini sokubhala esiqhubekayo sisuka ku-520MB/s siye ku-360MB/s, ukusebenza okungahleliwe kwehle kusuka ku-9500 IOPS kuya ku-5000. IOPS, ukulahlekelwa cishe ingxenye.

I-PS: Uma idatha eyengeziwe egcinwe kuyunithi Yeseli ngayinye, umthamo uyanda endaweni yeyunithi ngayinye, kodwa ngesikhathi esifanayo, kuholela ekwandeni kwezimo zamandla kagesi ezihlukene, okunzima kakhulu ukulawula, ngakho ukuzinza kwe-NAND Flash chip. kuba kubi kakhulu, futhi impilo yesevisi iba mfushane, ngayinye inezinzuzo zayo kanye nokubi.

(Impilo yokufunda nokubhala ye-NAND Flash ingeyereferensi kuphela)
Akunzima ukubona ukuthi ukusebenza kwezinhlobo ezine ze-NAND flash memory kuhlukile.Izindleko zeyunithi ngayinye ye-SLC ziphakeme kunezinye izinhlobo zezinhlayiya zememori ye-NAND flash, kodwa isikhathi sayo sokugcinwa kwedatha side futhi isivinini sokufunda siyashesha;I-QLC inomthamo omkhulu kanye nezindleko eziphansi, kodwa ngenxa yokuthembeka kwayo okuphansi nokuphila isikhathi eside Amaphutha nokunye okushiyekayo kusadingeka kuthuthukiswe.

Ngokombono wezindleko zokukhiqiza, isivinini sokufunda nokubhala nempilo yesevisi, izinga lezigaba ezine lithi:
SLC>MLC>TLC>QLC;
Izixazululo zamanje ezijwayelekile yi-MLC ne-TLC.I-SLC ihloselwe kakhulu izicelo zezempi nezamabhizinisi, ngokubhala ngesivinini esikhulu, izinga eliphansi lamaphutha, nokuqina isikhathi eside.I-MLC ihloselwe kakhulu izinhlelo zokusebenza zebanga lomthengi, umthamo wayo uphakeme izikhathi ezi-2 kune-SLC, izindleko eziphansi, ilungele ama-USB flash drives, omakhalekhukhwini, amakhamera edijithali namanye amakhadi ememori, futhi isetshenziswa kabanzi kuma-SSD ebangeni labathengi namuhla. .

Imemori ye-NAND flash ingahlukaniswa ngezigaba ezimbili: isakhiwo se-2D kanye nesakhiwo se-3D ngokuya ngezakhiwo ezahlukene zendawo.Ama-transistors amasango antantayo asetshenziswa kakhulu ku-2D FLASH, kuyilapho i-3D flash isebenzisa ikakhulukazi ama-CT transistors nesango elintantayo.Ingabe i-semiconductor, i-CT iyisivikeli, lezi zimbili zihlukile ngemvelo kanye nesimiso.Umehluko uthi:

Isakhiwo se-2D NAND Flash
Isakhiwo se-2D samaseli enkumbulo sihlelwa kuphela endizeni ye-XY ye-chip, ngakho okuwukuphela kwendlela yokufinyelela ukuminyana okuphezulu ku-wafer efanayo usebenzisa ubuchwepheshe be-flash ye-2D ukuncipha indawo yenqubo.
Okubi ukuthi amaphutha ku-NAND flash avame kakhulu kumanodi amancane;ngaphezu kwalokho, kunomkhawulo ku-node yenqubo encane kunazo zonke engasetshenziswa, futhi ukuminyana kwesitoreji akuphezulu.

Isakhiwo se-3D NAND Flash
Ukuze kwandiswe ukuminyana kwesitoreji, abakhiqizi bathuthukise ubuchwepheshe be-3D NAND noma i-V-NAND (i-NAND emile), obunqwabelanisa amaseli enkumbulo endizeni engu-Z ku-wafer efanayo.

Ku-3D NAND flash, amaseli enkumbulo axhunywe njengezintambo eziqondile kunezintambo ezivundlile ku-2D NAND, futhi ukwakha ngale ndlela kusiza ukuzuza ukuminyana okuphezulu kwendawo ye-chip efanayo.Imikhiqizo yokuqala ye-3D Flash yayinezendlalelo ezingu-24.